1 triquint semiconductor texas: www.triquint.com phone (972)994-8465 fax (972)994-8504 info-mmw@tqs.com may 2008 key features ? 4-18 ghz high isolation sp3t ? 1.0 db typical insertion loss ? 35 db nominal isolation ? 12 db typical return loss ? on-chip bias network ? dc blocked at rf ports ? chip dimensions: 2.16 x 2.16 x 0.10 mm (0.085 x 0.085 x 0.004 in) primary applications ? ew receivers ? radar ? communications systems measured fixtured data icontrol = 20ma product description the triquint TGS2313 is a 4-18 ghz single pole triple throw (sp3t) switch. this part is design ed using triquint?s proven standard vpin production process. the TGS2313 provides a nominal 1.0 db insertion loss, 12 db return loss, and 35 db isolation. the TGS2313 integrates dc blocking capacitors on all ports and includes decoupled dc bias pad s to reduce the number of off-chip components. the part is ideally suited for ew receivers, radar, and communication systems. evaluation boards are available upon request. lead-free and rohs compliant. -4 -3.5 -3 -2.5 -2 -1.5 -1 -0.5 0 4 6 8 1012141618 frequency (ghz) insertion loss (db) -70 -60 -50 -40 -30 -20 -10 0 4 6 8 1012141618 frequency (ghz) isolation (db) datasheet subject to change without notice. 4 - 18 ghz vpin sp3t switch TGS2313
TGS2313 2 triquint semiconductor texas: www.triquint.com phone (972)994-8465 fax (972)994-8504 info-mmw@tqs.com may 2008 table i maximum ratings symbol parameter 1/ value notes v + positive supply voltage +3 v 2/, 3/ v - negative supply voltage -3 v i + positive supply current (quiescent) 22 ma 2/ 3 / p in input continuous wave power 24 dbm 3 / p d power dissipated 0.45 w 3 /4 / t m mounting temperature (30 seconds) 320 0 c t stg storage temperature -65 to 150 0 c 1 / these ratings represent the maximum operable values for this device. 2 / v + max and i + max are both per bias pad. 3 / combinations of supply voltage, supply current, input power, and output power shall not exceed p d . 4 / when operated at this bias condition with a base plate temperature of 70 0 c, the median life is reduced to tbd hours. table ii function table state rf-a rf-b rf-c icontrol- a icontrol- b icontrol- c 1 low- loss isolated isolated +20 ma -20ma -20ma 2 isolated low- loss isolated -20ma +20 ma -20ma 3 isolated isolated low- loss -20ma -20ma +20 ma
TGS2313 3 triquint semiconductor texas: www.triquint.com phone (972)994-8465 fax (972)994-8504 info-mmw@tqs.com may 2008 table iii rf characterization table (t a = 25 c, nominal) icontrol = 20ma parameter through path identification test condition nominal units insertion loss rf input to rf output a f = 4 ? 18 ghz 1.0 db isolation rf input to rf output b rf input to rf output c f = 4 ? 18 ghz 35 db input return loss rf input to rf output a rf input to rf output b rf input to rf output c f = 4 ? 18 ghz 12 db output return loss rf input to rf output a rf input to rf output b rf input to rf output c f = 4 ? 18 ghz 12 db
TGS2313 4 triquint semiconductor texas: www.triquint.com phone (972)994-8465 fax (972)994-8504 info-mmw@tqs.com may 2008 measured fixtured data bias conditions: icontrol = 20 ma -4 -3.5 -3 -2.5 -2 -1.5 -1 -0.5 0 2 4 6 8 10 12 14 16 18 20 22 24 frequency (ghz) insertion loss (db) -70 -60 -50 -40 -30 -20 -10 0 2 4 6 8 10 12 14 16 18 20 22 24 frequency (ghz) isolation (db)
TGS2313 5 triquint semiconductor texas: www.triquint.com phone (972)994-8465 fax (972)994-8504 info-mmw@tqs.com may 2008 measured fixtured data bias conditions: icontrol = 20 ma -35 -30 -25 -20 -15 -10 -5 0 2 4 6 8 1012141618202224 frequency (ghz) return loss (db) input output -2 -1.8 -1.6 -1.4 -1.2 -1 -0.8 -0.6 -0.4 -0.2 0 10 12 14 16 18 20 22 24 input power (dbm) insertion loss (dbm) 4 ghz 8 ghz 12 ghz
TGS2313 6 triquint semiconductor texas: www.triquint.com phone (972)994-8465 fax (972)994-8504 info-mmw@tqs.com may 2008 equivalent schematic rf output c rf ou tpu t a icontrol a icontrol c rf input rf output b icontrol b
TGS2313 7 triquint semiconductor texas: www.triquint.com phone (972)994-8465 fax (972)994-8504 info-mmw@tqs.com may 2008 mechanical drawing tqs 2006
TGS2313 8 triquint semiconductor texas: www.triquint.com phone (972)994-8465 fax (972)994-8504 info-mmw@tqs.com may 2008 assembly drawing gaas mmic devices are susceptible to damage from electrostatic discharge. pr oper precautions should be observed during handling, assembly and test. note: 20ma control lines (icontrol_a, icontrol_b, icontrol_c) use on-chip resistors for diode current control. rf c icontrol_a icontrol_b icontrol_c rf b rf in rf a tqs 2006
TGS2313 9 triquint semiconductor texas: www.triquint.com phone (972)994-8465 fax (972)994-8504 info-mmw@tqs.com may 2008 assembly process notes gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. reflow process assembly notes: ? use ausn (80/20) solder with limited ex posure to temperatures at or above 300 c for 30 sec . ? an alloy station or conveyor furnace with reducing atmosphere should be used. ? no fluxes should be utilized. ? coefficient of thermal expansion matching is critical for long-term reliability. ? devices must be stored in a dry nitrogen atmosphere. component placement and adhesive attachment assembly notes: ? vacuum pencils and/or vacuum collets are the preferred method of pick up. ? air bridges must be avoided during placement. ? the force impact is critical during auto placement. ? organic attachment can be used in low-power applications. ? curing should be done in a convection oven; proper exhaust is a safety concern. ? microwave or radiant curing should not be used because of differential heating. ? coefficient of thermal expansion matching is critical. interconnect process assembly notes: ? thermosonic ball bonding is the preferred interconnect technique. ? force, time, and ultrasonics are critical parameters. ? aluminum wire should not be used. ? discrete fet devices with small pad sizes should be bonded with 0.0007-inch wire. ? maximum stage temperature is 200 c.
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